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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1850
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1850 is a switching device which can be driven directly by a 2.5-V power source. The PA1850 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* Can be driven by a 2.5-V power source * Low on-state resistance RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 130 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 200 m MAX. (VGS = -2.5 V, ID = -1.5 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27 +0.03 -0.08 0.8 MAX.
PA1850GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
-12 -10/+5
V V A A W C C
Gate Protection Diode Gate1
EQUIVALENT CIRCUIT
Drain1 Drain2
# 2.5 # 10
2.0 150 -55 to +150
Total Power Dissipation Channel Temperature Storage Temperature
Body Diode
Gate2
Body Diode
Notes 1. PW 10 s, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark
Source1
Gate Protection Diode
Source2
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11818EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1997, 2000
PA1850
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -12 V, VGS = 0 V VGS = # 10 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -4.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V ID = -1.5 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 10 A / s -0.5 2.0 -1.0 5.0 80 85 127 260 300 45 120 420 520 430 12 2 5 0.80 750 950 115 130 200 MIN. TYP. MAX. -10
# 10
UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
5 5
Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance
-1.5
5 5
Reverse Recovery Time Reverse Recovery Charge
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID (-) VGS (-) 0 = 1 s Duty Cycle 1 % ID
Wave Form
VGS (-) VGS
Wave Form
IG = -2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet D11818EJ2V0DS00
PA1850
5 TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
PW
10 ms
dT - Derating Factor - %
ID - Drain Current - A
-10
)L 4.0 on S( =- RD GS
d ite V) im
ID (pulse)
=1
ms
60
V (@
ID (DC)
-1
DC
10 0m s
40
20
0
Single Pulse Mounted on Ceramic 2 Substrate of 5000 mm x 1.1mm -0.01 PD(FET1) : PD(FET2) = 1:1
-0.1
30 60 90 120 TA - Ambient Temperature - C
150
-0.1
-1.0
-10.0
-100.0
VDS - Drain to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
TRANSFER CHARACTERISTICS -10 VDS = -10 V
-1.5
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10 V ID = -1 mA
ID - Drain Current - A
-1
-1
-0.1
TA = 125 C 75 C 25 C -25 C
-0.5
-0.01
-0.001
0
-1
-2
-3
0 -50
0
50
100
150
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - C
100
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT VDS = -10 V TA = -25 C 25 C 75 C 125 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 VGS = -2.5 V
10
200
TA = 125C
150
75C 25C
1
100
-25C
0.1 -0.1
-1
-10
-100
ID - Drain Current - A
50 -0.1
-1
-10
-100
ID - Drain Current - A
Data Sheet D11818EJ2V0DS00
3
PA1850
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 VGS = -4.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = -10 V
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
100
150
TA = 125C
80
TA = 125 C 75 C
100
75C 25C -25C
60
25 C -25 C
50
40
0 -0.1
-1
-10
-100
20 -0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
200
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = -1.5 A VGS = -2.5 V 160
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
500
ID = -1.5 A
400
120
-4.0 V -10 V
300
80
200
40
100
0 -50
0
0
50 100 Tch - Channel Temperature -C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
150
-2
-4
-6
-8
-10
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Swwitchig Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000 f = 1 MHz Coss Ciss
1000 tf tr td(off)
100 Crss
100
td(on)
10 -1
-10 VDS - Drain to Source Voltage - V
-100
10 -0.1
VDD = -10 V VGS(on) = -4.0 V RG = 10 -1 -10 ID - Drain Current - A
4
Data Sheet D11818EJ2V0DS00
PA1850
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10
-5 DYNAMIC INPUT CHARACTERISTICS
IF - Source to Drain Current - A
VGS - Gate to Source Voltage - V
ID = -2.5 A VDD = -4 V VDD = -10 V
-4 -3 -2 -1
1
0.1 0.4
VGS = 0 V 0.8 1.2 1.6
0 0
3
6
9
12
15
VF(S-D) - Source to Drain Voltage - V
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
62.5C/W
10
1
Mounted on Ceramic Substrate of 5000 mm2 x 1.1 mm Single Pulse PD(FET1) : PD(FET2) = 1:1
0.1 1m
10m
100m 1 10 PW - Pulse Width - S
100
1000
Data Sheet D11818EJ2V0DS00
5
PA1850
[MEMO]
6
Data Sheet D11818EJ2V0DS00
PA1850
[MEMO]
Data Sheet D11818EJ2V0DS00
7
PA1850
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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